micron · Memory ICs · MPN MT29F4G08ABBFAH4-AIT:F
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| Memory Size | 4Gbit |
|---|---|
| Voltage - Supply | 1.7V~1.95V |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error corr… |
| Data Retention - TDR (Year) | 10 years |
| Block Erase Time(tBE) | 2ms |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 240us |
| Standby Supply Current | 100uA |
| Interface | Parallel |
4Gbit 1.7V~1.95V Parallel 63-VFBGA (9x11) Memory (ICs) RoHS