micron · Memory ICs · MPN MT29F4G08ABADAH4:D
No reviews yet — be the first to review micron MT29F4G08ABADAH4:D.
| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+70℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Read buffer function;Copy back write function;Hardware reset function;Hardware write protection function;ECC error corr… |
| Data Retention - TDR (Year) | 10 years |
| Block Erase Time(tBE) | 700us |
| Page Programming Time (Tpp) | 200us |
| Write Cycle Time(tWC) | 20ns |
| Interface | Parallel |
2.7V~3.6V 4Gbit Parallel VFBGA-63(9x11) Memory (ICs) RoHS