micron M29W800DB70N6

micron · Memory ICs · MPN M29W800DB70N6

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Specifications

Voltage - Supply2.7V~3.6V
Memory Size8Mbit
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)800ms@(64KB)
Page Programming Time (Tpp)10us
Standby Supply Current100uA
InterfaceParallel

Technical details

2.7V~3.6V 8Mbit Parallel TSOP-48 Memory (ICs) RoHS

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