micron M29W160EB80ZA3SE

micron · Memory ICs · MPN M29W160EB80ZA3SE

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Specifications

Voltage - Supply2.7V~3.6V
Memory Size16Mbit
Operating temperature-40℃~+125℃
Program / Erase Cycles100,000 cycles
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)800ms@(64KB)
InterfaceParallel
Standby Supply Current100uA

Technical details

2.7V~3.6V 16Mbit Parallel TFBGA-48(6x8) Memory (ICs) RoHS

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