micron · Memory ICs · MPN M29F400FT55M3F2
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| Memory Size | 4Mbit |
|---|---|
| Voltage - Supply | 5V |
| Operating temperature | -40℃~+125℃ |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | - |
| Standby Supply Current | 60uA |
| Interface | Parallel |
4Mbit 5V Parallel SO-44 Memory (ICs) RoHS