micron M29F200FB55N3E2

micron · Memory ICs · MPN M29F200FB55N3E2

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Specifications

Voltage - Supply4.5V~5.5V
Memory Size2Mbit
Operating temperature-40℃~+125℃
Program / Erase Cycles100,000 cycles
FeaturesWrite enable latch;Hardware write protection;Power lock protection
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)1s
InterfaceParallel

Technical details

4.5V~5.5V 2Mbit Parallel TSOP-48 Memory (ICs) RoHS

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