MICROCHIP MNS2N3810U

MICROCHIP · Transistors (BJTs) · MPN MNS2N3810U

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Specifications

Current - Collector Cutoff10uA
Pd - Power Dissipation350mW
DC Current Gain150
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
typePNP
Vce Saturation(VCE(sat))250mV
Number2 PNP
Current - Collector(Ic)50mA
Operating Temperature-65℃~+200℃

Technical details

350mW 150 60V PNP 50mA SMD-6P Bipolar Transistor Arrays RoHS

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