MICROCHIP 2N657S

MICROCHIP · Transistors (BJTs) · MPN 2N657S

No reviews yet — be the first to review MICROCHIP 2N657S.

Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO40V
DC Current Gain40
Pd - Power Dissipation600mW
typeNPN
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+200℃

Technical details

40V 40 NPN TO-5AA Single Bipolar Transistors RoHS

Related Transistors (BJTs)