MICROCHIP 2N5415S

MICROCHIP · Transistors (BJTs) · MPN 2N5415S

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Specifications

Current - Collector Cutoff1mA
Collector - Emitter Voltage VCEO200V
DC Current Gain30
Pd - Power Dissipation750mW
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))2V
Operating Temperature-65℃~+200℃

Technical details

200V 30 PNP 1A TO-39 Single Bipolar Transistors

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