MICROCHIP 2N5011S

MICROCHIP · Transistors (BJTs) · MPN 2N5011S

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Specifications

Current - Collector Cutoff10nA
Collector - Emitter Voltage VCEO600V
DC Current Gain30
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+200℃

Technical details

600V 30 NPN 200mA TO-39(TO-205AD) Single Bipolar Transistors RoHS

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