MICROCHIP 2N3838/TR

MICROCHIP · Transistors (BJTs) · MPN 2N3838/TR

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO40V
DC Current Gain100
Pd - Power Dissipation350mW
Transition frequency(fT)-
typeNPN+PNP
Vce Saturation(VCE(sat))400mV
Current - Collector(Ic)600mA
Operating Temperature-65℃~+200℃

Technical details

40V 100 350mW NPN+PNP 600mA Flatpack-6 Bipolar Transistor Arrays RoHS

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