MICROCHIP 2N3501L

MICROCHIP · Transistors (BJTs) · MPN 2N3501L

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO150V
DC Current Gain100
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)300mA
Vce Saturation(VCE(sat))-
Operating Temperature-65℃~+200℃

Technical details

150V 100 NPN 300mA TO-5 Single Bipolar Transistors

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