MICROCHIP 2N1711S

MICROCHIP · Transistors (BJTs) · MPN 2N1711S

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Specifications

Current - Collector Cutoff10nA
Collector - Emitter Voltage VCEO30V
DC Current Gain100
Pd - Power Dissipation800mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1.5V
Operating Temperature-65℃~+200℃

Technical details

30V 100 NPN 500mA TO-39 Single Bipolar Transistors

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