MICROCHIP 2N1131L

MICROCHIP · Transistors (BJTs) · MPN 2N1131L

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Specifications

Current - Collector Cutoff10mA
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain20
Pd - Power Dissipation600mW
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))1.3V
Operating Temperature-65℃~+200℃

Technical details

40V 20 PNP 600mA TO-5AA Single Bipolar Transistors RoHS

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