MDD(Microdiode Semiconductor) SF1008ED

MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN SF1008ED

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Specifications

Non-Repetitive Peak Forward Surge Current-
Current - Rectified10A
Diode Configuration-
Operating Junction Temperature Range-55℃~+150℃
Pd - Power Dissipation-
Voltage - Forward(Vf@If)2.8V@10A
Reverse Leakage Current (Ir)1uA
Voltage - DC Reverse(Vr)800V
Reverse Recovery Time (trr)-

Technical details

10A 2.8V@10A 800V TO-252 Single Bipolar Transistors RoHS

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