MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN MMBT5551
No reviews yet — be the first to review MDD(Microdiode Semiconductor) MMBT5551.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 300mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 200mV |
Bipolar (BJT) Transistor NPN 160V 0.6A 300MHz 0.3W Surface Mount SOT-23