MDD(Microdiode Semiconductor) MMBT4401

MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN MMBT4401

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))750mV

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 0.3W Surface Mount SOT-23-3

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