MDD(Microdiode Semiconductor) GBU810 L

MDD(Microdiode Semiconductor) · Diodes & Rectifiers · MPN GBU810 L

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Specifications

Non-Repetitive Peak Forward Surge Current175A
Operating Junction Temperature Range-55℃~+150℃@(Tj)
Reverse Leakage Current (Ir)10uA@1kV
Voltage - Forward(Vf@If)1.1V@4A
Current - Rectified8A
Voltage - DC Reverse(Vr)1kV

Technical details

175A 1.1V@4A 8A 1kV GBU Bridge Rectifiers RoHS

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