MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN DTA123ECA
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| Transition frequency(fT) | 250MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 30 |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 1.2 |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Voltage - Input(Max)(VI(off)) | 500mV |
50V 30 100mA 200mW 1 PNP Pre-Biased PNP SOT-23 Single, Pre-Biased Bipolar Transistors RoHS