MDD(Microdiode Semiconductor) BC817-25

MDD(Microdiode Semiconductor) · Transistors (BJTs) · MPN BC817-25

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 0.5A 100MHz 300mW Surface Mount SOT-23

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