MCC UMT1N-TP

MCC · Transistors (BJTs) · MPN UMT1N-TP

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO50V
DC Current Gain-
Emitter-Base Voltage VEBO6V
Transition frequency(fT)-
Vce Saturation(VCE(sat))-
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Technical details

150mW 50V PNP 150mA SOT-363 Bipolar Transistor Arrays RoHS

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