MCC UMD3N-TP

MCC · Transistors (BJTs) · MPN UMD3N-TP

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
DC Current Gain30
Emitter-Base Voltage VEBO-
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)3V@10mA,0.3V
Current - Collector(Ic)100mA

Technical details

30 150mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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