MCC MMDT3906HE3-TP

MCC · Transistors (BJTs) · MPN MMDT3906HE3-TP

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))400mV
typePNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

100 40V 200mW PNP 200mA SOT-363 Bipolar Transistor Arrays RoHS

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