MCC MMBT5551HE3-TP

MCC · Transistors (BJTs) · MPN MMBT5551HE3-TP

No reviews yet — be the first to review MCC MMBT5551HE3-TP.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO160V
DC Current Gain100
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

160V 100 NPN 600mA SOT-23 Single Bipolar Transistors RoHS

Related Transistors (BJTs)