MCC MJD122-TP

MCC · Transistors (BJTs) · MPN MJD122-TP

No reviews yet — be the first to review MCC MJD122-TP.

Specifications

Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))4V@8A,80mA

Technical details

100V 1000 NPN 8A DPAK(TO-252) Single Bipolar Transistors RoHS

Related Transistors (BJTs)