MCC BC857BV-TP

MCC · Transistors (BJTs) · MPN BC857BV-TP

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation150mW
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

150mW 200 45V PNP 100mA SOT-563 Bipolar Transistor Arrays RoHS

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