MCC BC856S-TP

MCC · Transistors (BJTs) · MPN BC856S-TP

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Specifications

Current - Collector Cutoff15nA
DC Current Gain110
Pd - Power Dissipation200mW
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))650mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 200mW Surface Mount SOT-363

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