MCC BC846BSHE3-TP

MCC · Transistors (BJTs) · MPN BC846BSHE3-TP

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

200 65V 200mW NPN 100mA SOT-363 Bipolar Transistor Arrays RoHS

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