LRC S-LMBT5551DW1T1G

LRC · Transistors (BJTs) · MPN S-LMBT5551DW1T1G

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO-
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation225mW
Configuration-
Number2 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 225mW SC-88

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