LRC S-LDTB114ELT1G

LRC · Transistors (BJTs) · MPN S-LDTB114ELT1G

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Specifications

Transition frequency(fT)200MHz
DC Current Gain56
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor10kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV

Technical details

56 500mA 1 PNP Pre-Biased PNP 200mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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