LRC LMUN5114DW1T1G

LRC · Transistors (BJTs) · MPN LMUN5114DW1T1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor10kΩ
Resistor Ratio0.21
Pd - Power Dissipation256mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 256mW Surface Mount SOT-363

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