LRC LMBT5551DW1T1G

LRC · Transistors (BJTs) · MPN LMBT5551DW1T1G

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation300mW
Number2 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300mW SC-88

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