LRC · Transistors (BJTs) · MPN LDTD114ELT1G
No reviews yet — be the first to review LRC LDTD114ELT1G.
| Transition frequency(fT) | 200MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 56 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 10kΩ |
| type | NPN |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,0.3V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount SOT-23