LRC LDTD113ZLT1G

LRC · Transistors (BJTs) · MPN LDTD113ZLT1G

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain82
Operating Temperature-
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor1.3kΩ
typeNPN
Resistor Ratio12
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)1.5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount SOT-23

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