LRC LDTB113ZLT1G

LRC · Transistors (BJTs) · MPN LDTB113ZLT1G

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor1kΩ
typePNP
Resistor Ratio10
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@20mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 500mA 200mW Surface Mount SOT-23

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