LRC LBTP660Z4TZHG

LRC · Transistors (BJTs) · MPN LBTP660Z4TZHG

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain70
Pd - Power Dissipation833mW
Number1 PNP
typePNP
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))350mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 60V 6A 100MHz 833mW Surface Mount SOT-223

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