LRC L8550QLT1G

LRC · Transistors (BJTs) · MPN L8550QLT1G

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Specifications

Current - Collector Cutoff150nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 800mA 300mW Surface Mount SOT-23

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