LGE SS8550

LGE · Transistors (BJTs) · MPN SS8550

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A Through Hole TO-92

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