LGE · Transistors (BJTs) · MPN MMDT3906
No reviews yet — be the first to review LGE MMDT3906.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 200mW |
| Number | 2 PNP |
| type | PNP |
| Current - Collector(Ic) | 200mA |
| Vce Saturation(VCE(sat)) | 400mV |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363