LGE MMBT4403LT1

LGE · Transistors (BJTs) · MPN MMBT4403LT1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 350mW Surface Mount SOT-23

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