LGE FMMT493

LGE · Transistors (BJTs) · MPN FMMT493

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 100V 1A 150MHz 500mW Surface Mount SOT-23

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