LGE D882

LGE · Transistors (BJTs) · MPN D882

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)90MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain230
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1.25W Through Hole TO-126

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