LGE BD434

LGE · Transistors (BJTs) · MPN BD434

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO22V
Emitter-Base Voltage VEBO5V
DC Current Gain375
Pd - Power Dissipation1.25W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 22V 4A 3MHz 1.25W Through Hole TO-126

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