LGE BCP56-16

LGE · Transistors (BJTs) · MPN BCP56-16

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 80V 1000mA 2000mW Surface Mount SOT-223

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