LGE BC847PN

LGE · Transistors (BJTs) · MPN BC847PN

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain450
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
ConfigurationStandalone
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-55℃~+150℃

Technical details

45V 450 NPN+PNP 1 NPN + 1 PNP 100mA SOT-363 Single Bipolar Transistors RoHS

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