LGE BC556B

LGE · Transistors (BJTs) · MPN BC556B

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
DC Current Gain180
Pd - Power Dissipation625mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))650mV

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 150MHz 625mW Through Hole TO-92

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