LGE BC549C

LGE · Transistors (BJTs) · MPN BC549C

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain500
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 30V 100mA 250MHz 625mW Through Hole TO-92

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