LGE BC338-16

LGE · Transistors (BJTs) · MPN BC338-16

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)210MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain175
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 25V 800mA 210MHz 625mW Through Hole TO-92-3

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