LGE · Transistors (BJTs) · MPN 2SD669A
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Collector - Emitter Voltage VCEO | 160V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 1W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 1.5A |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 160V 1.5A 140MHz 1W Through Hole TO-126