KTP MMBT6517

KTP · Transistors (BJTs) · MPN MMBT6517

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Specifications

Current - Collector Cutoff250nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation350mW
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 300V 0.3A 50MHz 350mW Surface Mount SOT-23

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